E200b Sn200b00 Pir Infared Nicera Pyroelectric Infrared Sensor To-5 New B8
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Features E200b Sn200b00 Pir Infared Nicera Pyroelectric Infrared Sensor To-5 New B8
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Descriptions E200b Sn200b00 Pir Infared Nicera Pyroelectric Infrared Sensor To-5 New B8
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Package Includes
1 Piece - Infrared Sensor
Brand New High Quality
Size: 8.3 * 4.2mm
Sensitive element area: 2.0 × 1.0mm2
Substrate material: Silicon
Substrate thickness: 0.5mm
Wavelength 7-14μm
Average Transmittance:> 75%
Output:> 2.5V (420 ° k blackbody modulation frequency 0.3-3.0Hz 1Hz bandwidth of 72.5db gain)
Noise: <200mV (mVp-p) (25 ℃)
Balance: <20%
Operating voltage :2.2-15V
Current: 8.5-24μA (VD = 10V, Rs = 47kω, 25 ℃)
Source voltage :0.4-1 .1 V (VD = 10V, Rs = 47kω, 25 ℃)
Operating temperature: -20 ℃ - +70 ℃
Storage temperature: -35 ℃ - +80 ℃
Field: 139 ° × 126 °
Package: DIP
1 Piece - Infrared Sensor
Brand New High Quality
Size: 8.3 * 4.2mm
Sensitive element area: 2.0 × 1.0mm2
Substrate material: Silicon
Substrate thickness: 0.5mm
Wavelength 7-14μm
Average Transmittance:> 75%
Output:> 2.5V (420 ° k blackbody modulation frequency 0.3-3.0Hz 1Hz bandwidth of 72.5db gain)
Noise: <200mV (mVp-p) (25 ℃)
Balance: <20%
Operating voltage :2.2-15V
Current: 8.5-24μA (VD = 10V, Rs = 47kω, 25 ℃)
Source voltage :0.4-1 .1 V (VD = 10V, Rs = 47kω, 25 ℃)
Operating temperature: -20 ℃ - +70 ℃
Storage temperature: -35 ℃ - +80 ℃
Field: 139 ° × 126 °
Package: DIP
